• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The invention relates to a diode array photodetection device and to its manufacturing method. In the device, each diode of the array has an absorption region (20) having a first bandgap energy and a collection region (30) having a first type of doping, and in adjacent diodes in the network are separated by a trench (50) having flanks and a bottom. The bottom and flanks of a trench (50) form a stabilization layer (60) that has a second doping type opposite to the first type of doping and a band gap energy greater than the first band gap energy 'absorption.
    公开号:FR3044468A1
    申请号:FR1561487
    申请日:2015-11-27
    公开日:2017-06-02
    发明作者:Johan Rothman；Florent Rochette
    申请人:Commissariat a lEnergie Atomique CEA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    COATED PHOTO-DETECTION DEVICE HAVING BANDWIDTH COATED TRENCHES PROHIBITED AND METHOD FOR MANUFACTURING
    DESCRIPTION
    TECHNICAL AREA
    The field of the invention is that of photodetectors comprising a network of diodes, such as a matrix network, manufactured on a semiconductor substrate. The invention relates more specifically to p / n or n / p type diodes that can be used for visible or infrared imagers.
    STATE OF THE PRIOR ART
    In many photo-detection applications, diodes are arranged in diode arrays on a substrate. In a matrix, the diodes are arranged in rows and columns. A diode matrix may be used to enable detection of electromagnetic radiation. It can indeed form electron-hole pairs by interaction between the electromagnetic radiation and the substrate. This allows the appearance of a current proportional to an intensity of the incident radiation. Each diode then forms a pixel of a photodetector.
    By coupling the matrix of diodes with an electronic reading circuit, it is thus possible to capture the spatio-temporal variation of the intensity of light on the photodetector. The sensitivity of such a photodetector is given by its ability to translate small spatial or temporal variations in light intensity into a usable compared signal despite random variations (noise) resulting from thermal and electrical phenomena in the diodes and in the reading circuit.
    Such a matrix of diodes is illustrated in Figs. 1a and 1b which respectively show a top view and a sectional view along a line of the die. A diode is formed in a substrate having an absorption layer 1 of a semiconductor material with a band gap and characterized by a conductivity type. The diode comprises a collection region 2 of opposite conductivity type, thus forming a p-n junction.
    As illustrated in FIG. 1b, each collection region is in contact with a metal pad 3 forming a diode contact. A metal region 4, formed at the periphery of the matrix, is in contact with the substrate, and forms a substrate contact. The two regions of opposite conductivity type 1, 2 are protected from degradation of their chemical, mechanical and electronic properties by means of a passivation layer 5 covering the surface of the substrate with the exception of the diode contact zones and substrate contact.
    In the region near the interface of the two regions of opposite conductivity type 1, 2 forms a so-called space charge zone (ZCE). This zone is characterized by the presence of an energy barrier for the majority carriers on each side of the junction. Photons arriving in the absorption layer 1 of the semiconductor substrate can transfer their energy to an electron. If the electron transits between the valence band and the conduction band and moves to the space charge area, the charge will be collected by the collection region 2. The charges thus collected may be transferred to a electronic circuit, called read circuit, connected to each diode to have a usable signal. The charge extraction is compensated by a load charge by the substrate contact which is, in the case generally used in the state of the art, common for all the diodes.
    Upon detection of a large flux of photons, each diode delivers a large flow of charge, i.e. electric current, proportional to the photon flux arriving near the diode. The currents of all the diodes are added through the substrate to the substrate contact. In the presence of an electrical resistance in the substrate, the current in it can strongly influence the operation of the diodes.
    This electrical resistance can thus induce a variation of the polarization which alters the operation of the diodes. In the extreme case, it can cause a cancellation of the transfer of charges between the diodes and the read circuit by a reduction of the potential barrier in the junctions. This phenomenon is all the more important as the number of diodes and the flux of photons on the matrix are important.
    This electrical resistance can also greatly slow down the transfer of charges in the read circuit, even in the presence of a low flux, because of a collective effect RC.
    Furthermore, the control of the state of the interface between the passivation layer 5 and the semiconductor regions 1, 2 is crucial to obtain maximum sensitivity. This is due to the faults that may be present at the interface, but also to states in the passivation that act as traps for the loads. The defects at the interface can thus act as generating / recombination centers of the carriers which decrease the photonic signal and increase the contribution of the thermal or electrical origin current generated in the substrate and / or in the junction. The trapped states in the passivation are in turn likely to temporally vary the local charge density near each trap. These fluctuations can in turn generate fluctuations on the photon current and on the different currents of darkness.
    Another source of temporal variation in diode performance is defects present in materials, such as dislocations or complexes of atoms that generate energy states in the bandgap. The influence of these defects depends on their location and their electrical environment. The presence of these defects is not necessarily unacceptable, but a modulation of their location and / or their electrical environment is highly likely to modulate the performance of the diodes by inducing sensitivity variations and / or an increase in the number of faulty diodes. . In particular, the deleterious influence of these defects increases significantly when the operating temperature of the photodetector increases. For example, the accessible temperature range for photodetectors operating in the infra-red is today limited to about 160K. Beyond this temperature, the defect becomes unacceptable for the proper functioning of a high-performance photodetector.
    Another important feature for the performance of a photodetector is the ability to collect the photo-carriers generated in a pixel in the same pixel, without inducing a signal on the neighboring pixels (problem of electro-cross-talk). This feature, as measured by the point spread function (PSF), is crucial for making imagers with reduced pixel size and pitch. In an imager made according to the state of the art, the charges are collected by diffusion (random walk) and the PSF is degraded when the pixel pitch approaches the thickness of the absorption layer.
    One technique for reducing this crosstalk is to physically separate the pixels by etching trenches around the pixels. Each pixel in this case forms a mesa. Patent application WO 2005/101512 A2 discloses a trench etching in a collection layer which rests on an absorption layer, the trenches extending up to the absorption layer and the flanks of the trenches presenting a type of conductivity opposite the conductivity type of the conductive layer to control the electrical properties thereof. The pixel array is however sensitive to the presence of a metallization and / or defects present on the surface, and can therefore have noise defects (fluctuating).
    DISCLOSURE OF THE INVENTION The aim of the invention is to improve the sensitivity of a photodetector by stabilizing the performance of the diodes, in particular by reducing the spatial fluctuations and / or electrical states of the defects present in the materials and by elimination of electro-optical crosstalk between diodes. For this purpose, the invention proposes a diode array photodetection device, in which each diode of the network comprises an absorption region which has a first forbidden band energy and a collection region which has a first type of diode. doping. Adjacent diodes in the network are separated by a trench with flanks and a bottom. A stabilizing layer is present on the bottom and flanks of a trench. The stabilization layer has a second type of doping opposed to the first type of doping and a band gap energy greater than the first band gap energy of the absorption regions.
    Some preferred but non-limiting aspects of this device are the following: the second type of doping is a P type doping; a trench separates the absorption regions of the adjacent diodes and is devoid of contact with the collection regions of the adjacent diodes; the absorption regions of the diodes are based on an intermediate layer which has the same type and the same level of doping as the absorption regions and a band gap energy greater than the first band gap energy of the absorption regions; the stabilization layer of a trench extends through at least part of the intermediate layer; it furthermore comprises a passivation layer which covers each diode with the exception of contact regions of an electrically conductive pad with a collection region of a diode; the stabilization layer extends from the flanks of the trench for a given distance below the passivation layer; each diode further comprises a region located above the absorption region which has the same type of doping as the absorption region and a band gap energy greater than that of the absorption region; the absorption region of a diode has a doping level of less than 5.1016 at / cm 3; the stabilization layer of a trench is covered with a metallization layer. The invention also relates to a method for manufacturing a photo-detection device comprising a diode array, wherein each diode of the network comprises an absorption region which has a first band gap energy and a collection region which has a first type of doping, the method comprising forming trenches separating the adjacent diodes in the network, the trenches having flanks and a bottom. The method includes a step of forming a stabilizing layer on the bottom and flanks of a trench, the stabilizing layer having a second doping type opposed to the first type of doping and a band gap energy greater than the first energy of bandgap absorption regions. The step of forming the stabilization layer may include in particular the transformation of the bottom and flanks of a trench by implantation and diffusion of an impurity.
    BRIEF DESCRIPTION OF THE DRAWINGS Other aspects, objects, advantages and characteristics of the invention will appear better on reading the following detailed description of preferred embodiments thereof, given by way of non-limiting example, and made in reference to the accompanying drawings in which, in addition to Figures la and lb already discussed: Figures 2a and 2b are respectively a sectional view and from above along a line of diodes of a matrix of diodes according to the invention; Figures 3 and 4 illustrate alternative embodiments of the invention; Figures 5a-5e illustrate a possible embodiment of a method of manufacturing a photo-detection device according to the invention.
    DETAILED PRESENTATION OF PARTICULAR EMBODIMENTS
    With reference to FIGS. 2a and 2b, the invention relates to a photodetection device comprising a light-transparent substrate 10 in the spectral detection range of the device and an array of diodes. Each diode comprises an absorption region 20 which has a band gap energy adapted for the spectral range of detection. Each diode furthermore comprises, in the absorption region 20, a collection region 30 which has a first type of doping, for example an N-type doping, with a doping level typically greater than 5 × 10 16 at / cm 3.
    The absorption regions 20 are for example derived from an absorption layer, for example CdHgTe. Such a layer may in particular have been formed by epitaxy on a CdZnTe substrate. Its cadmium composition can be between 20 and 40%. Its thickness is for example between 2 and 6 pm.
    The absorption regions 20 are preferably of the N type. However, they can also be of the P type. Their doping level is, for example, between 1 × 10 14 and 5 × 10 16 at / cm 3.
    In one possible embodiment, the absorption regions 20 of the diodes are based on an intermediate layer 40 also formed by epitaxy on the surface of the substrate 10. The intermediate layer 40 has the same type and the same level of doping as the absorption and a band gap energy greater than that of the absorption regions, typically obtained by means of a cadmium composition greater than that of the absorption regions. The cadmium composition of the intermediate layer 40 may be constant or follow a compositional gradient in which the cadmium composition decreases to reach the absorption regions 20. The thickness of the intermediate layer 40 is for example between 1 and 2 pm.
    Still with reference to Figures 2a and 2b, in the diode array, the adjacent diodes are separated by a trench 50 which has flanks and a bottom connecting the flanks. The trenches thus define mesa-shaped pixels. They form a grid (in the case of a matrix network, a grid in rows and columns that extend to the periphery of the matrix) from separating each of the adjacent diodes. As shown in Fig. 2a, a trench 50 separates the absorption regions 20 from adjacent diodes and is devoid of contact with the collection regions 30 of the adjacent diodes.
    In the context of the invention, there is a stabilizing layer 60 on the bottom and the flanks of the trenches. The stabilization layer 60 has a second type of doping opposed to the first type of doping of the collection regions 30. The second type of doping can thus be of type P. It is furthermore expected that the stabilization layer 30 has a band energy. greater than that of the absorption regions.
    In such a device, the presence of the trenches defines a local minimum of energy for defects associated with deformation of the crystal lattice, such as dislocations and atomic aggregates. The presence of such defects, formed during the manufacture or use of the device (thermal cycling of the finished product), is thus more likely in the region at the bottom of the trenches. Formation of the high bandgap stabilization region in this background region makes it possible to reduce the amplitude of the fluctuations associated with these defects on the performance of the photodetector, and thus allows a stabilization of the performance due to a reduction. the number of noise defects.
    Stabilization layer 60 is also found on the sides of a trench. The stabilizing layer thus comprises a portion 60a in the bottom of the trenches and portions 60b on the sides of the trenches. The extension of the stabilization layer on the sides of the trenches reduces, by the same effect as that previously indicated, the impact of the defects generated during the formation of the trenches.
    The stabilizing layer 60 may be derived from a transformation of the sidewalls and the bottom of a trench, carried out by incorporation (for example by implantation) and diffusion of an impurity (of the acceptor type in the case of P-type doping, by example of arsenic) able to lead to obtaining a band gap energy region greater than that of the absorption regions, for example by promoting an inter-diffusion between the atoms of Cadmium and Mercury in a layer of CdHgTe.
    The geometry of the flanks of a trench is preferably adapted to facilitate incorporation of the impurity. In the case of implantation of the impurity, this geometry is preferably characterized by inclined flanks. The bottom of the trenches can be pointed, rounded or rectangular.
    Taking the example of an N-type collection layer and a P-type stabilization layer, an N / x / P junction is formed in each diode.
    When the absorption regions exhibit n-type doping, each diode has a pn junction located at the interface between the absorption region 20 and the stabilization layer 60 on the flanks of the trench 50 separating said absorption region. of the absorption region of the adjacent diode.
    When the absorption regions exhibit p-type doping, each diode has a p-n junction located at the interface between the collection region 30 and the absorption region 20.
    In a preferred embodiment of the invention, the stabilization layer 60 extends through at least a portion of the intermediate layer 40 underlying the absorption regions 20 and the band gap energy greater than the In this way, the photoresists generated in the absorption region of a diode are confined therein and can not diffuse to the adjacent diode from which it is separated by the trench 50. This confinement limits the electro-optical crosstalk and this embodiment is thus favorable to the production of photodetectors with a small pixel pitch. In the example of FIG. 2a, the stabilization layer 60 passes entirely through the intermediate layer 40 until it opens into the substrate 10.
    The device according to the invention may further comprise a peripheral substrate contact arranged on at least one side of the diode array. This contact is not shown in Figure 2a and 2b but is similar to that discussed above in connection with Figures la and lb. Such a peripheral substrate contact makes it possible to provide an electrical connection between the substrate and the reading circuit on the periphery of the diode array, thus freeing space between the diodes, and advantageously making it possible to produce a diode array with a small pitch between the diodes. diodes.
    As shown in FIG. 2a, the device further comprises a passivation layer 70 which covers the diode array, with the exception of the trenches 50, of contact regions of an electrically conductive pad 80 with a collection region 30. a diode, and optionally a peripheral contact region of an electrically conductive pad with the substrate.
    The diodes are thus protected against a degradation that can be of mechanical, chemical and electrical origin by the passivation layer 70. The passivation is opened locally above the collection regions 30 to allow metal contacts 80 to be formed in these regions. It may also, but not necessarily, be open above the stabilizing layer 60 of the trenches 50 to allow a metal contact 90 to be formed therein.
    The pads 80 are located above the collection regions 30 of each pixel. These diode contacts 80 make it possible to make an individual electrical connection of each diode with an electronic reading circuit which is capable of assembling the information coming from each pixel.
    As shown in FIGS. 2a and 2b, each stabilization layer 60 of a trench may be covered with a metallization layer 90. This metallization, in contact with the stabilization layer, is distributed in and on the sides of the trenches until at the periphery of the matrix as shown in Figure 2b. In an alternative embodiment, the continuity of the substrate contact being provided by the stabilization layer 60, the metallization 90 may have a break in continuity with the substrate contact by not coming to cover the stabilization layer by the metallization 90 in certain places, for example at each inter-pixel region (at each crossing of a line and a column in Figure 2b). The advantage of this variant is to relax the mechanical stresses induced by a metallization deposit, these constraints can lead to the generation of structural defects and therefore be sources of noise and additional parasitic current. The stability of the performances as well as the performances themselves are thus improved.
    In another alternative embodiment shown in Figure 3, the stabilization layer 60 extends from the sides of the trench a given distance below the passivation layer 70. In other words, the stabilization layer 60 also includes portions 60c extending under the passivation layer 70 from the top of the portions 60b formed by the flanks of a trench. These portions 60c are dimensioned so as not to come into contact with a collection region 30, being separated by a distance of at least 0.5 μιτι. This variant makes it possible to reduce the influence of the defects located in and near the passivation layer 70 on the stability of the performance.
    In another variant embodiment shown in FIG. 4, compatible with that of FIG. 3, each diode further comprises a region 100 located above the absorption region 20 which has the same type of doping as the region of FIG. absorption and a band gap energy greater than that of the absorption region. This increase of the bandgap energy above the absorption region 20 under the passivation layer makes it possible to reduce the influence of the defects on the electro-optical performance and thus to improve the stability of the performance of each pixel. In the case of a doping of the opposite type of the absorption layer 20 and the collection region 30, it is preferable that the collection region 30 exceeds this region 100 of strong bandgap to be in contact with the region. absorption 20.
    The combination of the two variants presented above makes it possible, in addition to improving the stability of the performances, to reduce the generation of a tunnel current in the zone between the stabilization layer 60 and the collection region 20, allowing to access larger inverse polarizations.
    It will be noted that these two variants are particularly advantageous for applications at high operating temperature of the photodetector (so-called HOT applications for "High Operating Temperature").
    In another variant embodiment, the regions 20, and optionally the regions 40 and 100, have a low doping level, typically less than 1 × 10 15 at / cm 3. A large part of the volume of these regions is then depleted for low values of inverse polarization, typically less than 1 to 2 V. This variant makes it possible to eliminate the contribution of the diffusion currents to the dark current, which will be limited to the current called GR (for Generation-Recombination), generated on the defects present in the space charge zone (ZCE) during the application of the reverse bias. In addition, this variant makes it possible to reduce the collection time of the photocarriers, which is favorable for obtaining a stabilized photonic sensitivity. The invention is not limited to the above-described photo-detection device, but also extends to a method of manufacturing a photo-detection device comprising a network of diodes, in which each diode of the network comprises a region absorber having a first bandgap energy and a collection region having a first type of doping. The method includes forming a trench separating adjacent diodes in the array, and a step of transforming the bottom and flanks of a trench into a stabilization layer having a second type of doping opposed to the first type of doping and a bandgap energy greater than the first bandgap energy of the absorption regions.
    FIGS. 5a-5e illustrate an exemplary embodiment of such a method which starts (FIG. 5a) by a step of supplying a substrate 10 carrying the intermediate layer 40 and the absorption layer 20.
    With reference to FIG. 5b, the trenches 50 forming a grid delimiting the collection region of the carriers of each of the diodes are then etched. The etching is deep enough so that the impurity implanted in the next step can diffuse into the intermediate layer 40. The etching is typically carried out until reaching the intermediate layer 40, or stops at no more than 1 μιτι of the interface between the absorption layer 20 and the intermediate layer 40. The trenches thus extend in the absorption layer to separate the absorption regions.
    Still with reference to FIG. 5, an acceptor-type impurity, preferably As, is then implanted, followed by activation and diffusion annealing of this acceptor-type impurity. The use of a doping element, such as As or Sb, promotes the inter-diffusion of Cd between the regions in order to form the stabilization layer with a P-type doping and a gap greater than the absorption layer 40.
    With reference to FIG. 5c, the deposition of a passivation layer 70 is carried out.
    An annealing under saturated Hg vapor pressure is then implemented in order to eliminate the Hg gaps. This annealing makes it possible to perform an interdiffusion of cadmium in the passivation layer 70 and the stabilization layer 60. a temperature above 400 ° C for more than one hour.
    As shown in FIG. 5d, a collection region 30 of high N + doping, for example Bore implantation, is then formed in the center of each pixel.
    The passivation is then opened at the periphery of the photodiode array, at the level of the trenches and at the center of each pixel, then at the deposition of a metal layer and at its etching to keep it at each level. pixel, at the peripheral substrate contact and at each trench. The remaining thickness of metal is typically less than 1 μm. The invention is advantageously applicable in the following cases: imaging requiring rapid start-up or continuous use without recalibration other than that made at the factory; imaging at high operating temperature, by reducing the number of noise defects and reducing the dark current; large-format imaging, the metallized grid allowing indeed to obtain a n / P structure with a very weak depolarization effect; low pitch pixel imaging, by removing carrier scattering crosstalk between pixels. The invention can also be used with an optical concentration device to promote obtaining a maximum quantum efficiency. In this case, the volume of the absorption region can be minimized in order to reduce the dark current and improve the sensitivity and / or increase the operating temperature of the detector.
    权利要求:
    Claims (13)
    [1" id="c-fr-0001]
    A diode array photodetection device, wherein each diode of the array has an absorption region (20) having a first band gap energy and a collection region (30) having a first type of doping , and wherein the adjacent diodes in the array are separated by a trench (50) having flanks and a bottom, characterized in that it comprises a stabilizing layer (60) on the bottom and flanks of a trench ( 50), the stabilization layer having a second doping type opposite to the first type of doping and a band gap energy greater than the first band gap energy of the absorption regions.
    [2" id="c-fr-0002]
    2. Device according to claim 1, wherein the second type of doping is a P-type doping.
    [3" id="c-fr-0003]
    3. Device according to one of claims 1 and 2, wherein a trench (50) separates the absorption regions of the adjacent diodes and is devoid of contact with the collection regions (30) of the adjacent diodes.
    [4" id="c-fr-0004]
    4. Device according to one of claims 1 to 3, wherein the absorption regions (20) of the diodes are based on an intermediate layer (40) having the same type and the same level of doping as the absorption regions. and a bandgap energy greater than the first bandgap energy of the absorption regions.
    [5" id="c-fr-0005]
    5. Device according to claim 4, wherein the stabilization layer (60) of a trench extends through at least a portion of the intermediate layer (40) so as to prevent the diffusion of the carriers generated in the region d absorption of a diode to the adjacent diode from which it is separated by the trench.
    [6" id="c-fr-0006]
    6. Device according to one of claims 1 to 5, further comprising a passivation layer (70) which covers each diode with the exception of contact regions of an electrically conductive pad (80) with a collection region ( 20) of a diode.
    [7" id="c-fr-0007]
    The device of claim 6, wherein the stabilizing layer (60) extends from the flanks of the trench a given distance below the passivation layer (70).
    [8" id="c-fr-0008]
    8. Device according to one of claims 1 to 7, wherein each diode further comprises a region located above the absorption region which has the same type of doping as the absorption region and a band energy prohibited greater than that of the absorption region.
    [9" id="c-fr-0009]
    9. Device according to one of claims 1 to 8, wherein the absorption region of a diode has a doping level of less than 5.1016 at / cm3.
    [10" id="c-fr-0010]
    10. Device according to one of claims 1 to 9, wherein the stabilization layer (60) of a trench is covered with a metallization layer (90).
    [11" id="c-fr-0011]
    The device of claim 10, wherein the trench metallization layer is in electrical contact with a peripheral substrate contact arranged on at least one side of the diode array.
    [12" id="c-fr-0012]
    A method of manufacturing a photo-detecting device having a diode array, wherein each diode of the array has an absorption region having a first band gap energy and a collection region having a first type of diode. doping, the method comprising the formation of trenches separating the adjacent diodes in the network, the trenches having flanks and a bottom, characterized in that it comprises a step of forming a stabilizing layer on the bottom and the flanks; a trench, the stabilization layer having a second doping type opposite to the first type of doping and a band gap energy greater than the first band gap energy of the absorption regions.
    [13" id="c-fr-0013]
    The method of claim 12, wherein the step of forming a stabilization layer comprises transforming the bottom and flanks of a trench by implantation and diffusion of an impurity.
    类似技术:
    公开号 | 公开日 | 专利标题
    US10573675B2|2020-02-25|Dual band photodetector and a method thereof
    EP3381057B1|2019-09-25|Photodetection device having a coating comprising trenches with a wide bandgap coating and production method
    BE1022696B1|2016-08-01|LOW NOISE HYBRID DETECTOR USING LOAD TRANSFER
    EP1756872B1|2018-07-18|Mesa structure photon detection circuit
    FR3006104A1|2014-11-28|DIODE MATRIX DEVICE WITH IMPROVED STABILITY
    EP3012876B1|2020-11-04|Method for manufacturing a low-noise photodiode
    FR2954996A1|2011-07-08|PHOTODIODE, PHOTODIODE NETWORK AND METHOD FOR PASSIVATION OF A PHOTODIODE OF II-VI GROUPS
    WO2014118308A1|2014-08-07|Photodiode array having a charge-absorbing doped region
    Bajaj et al.2007|Comparison of type-II superlattice and HgCdTe infrared detector technologies
    EP3240030B1|2021-08-18|Photo-detection device with overdoped inter-diode array and manufacturing method
    BE1021287B1|2015-10-20|EPITAXIAL STRUCTURE FOR VERTICALLY INTEGRATED LOAD TRANSFER GRID TECHNOLOGY IN OPTOELECTRONIC MATERIALS
    EP1672696B1|2011-09-14|Semiconductor device to detect multi-spectral radiaton and method of using the device
    FR2984607A1|2013-06-21|CURED PHOTODIODE IMAGE SENSOR
    EP2359414A2|2011-08-24|Infrared detector with extended spectral response in the visible field
    US20100295141A1|2010-11-25|Two colour photon detector
    EP3381056B1|2020-09-09|Photodetection device which has an inter-diode array and is overdoped by metal diffusion and manufacturing method
    US20140217540A1|2014-08-07|Fully depleted diode passivation active passivation architecture
    EP3208854A1|2017-08-23|Photodiode structure, component and manufacturing method of a photodiode structure
    EP2382672B1|2018-11-07|Method of making a photodiode and corresponding photodiode and electromagnetic radiation detector
    FR3092700A1|2020-08-14|BARRIER PHOTO-DETECTOR MATRIX WITH LOCAL DEPLOYMENT PIXELLISATION
    FR3105410A1|2021-06-25|Radiation detector and associated manufacturing process
    EP3000132A1|2016-03-30|Photodiode array having adjustable charge-absorption
    FR2742581A1|1997-06-20|Dual-waveband infrared detector with planar spatio-temporal coherence
    同族专利:
    公开号 | 公开日
    IL259543D0|2018-07-31|
    EP3381057A1|2018-10-03|
    FR3044468B1|2018-07-06|
    US10566366B2|2020-02-18|
    US20180374881A1|2018-12-27|
    IL259543A|2021-07-29|
    EP3381057B1|2019-09-25|
    WO2017089527A1|2017-06-01|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    US5880510A|1988-05-11|1999-03-09|Raytheon Company|Graded layer passivation of group II-VI infrared photodetectors|
    US5602414A|1993-06-18|1997-02-11|Mitsubishi Denki Kabushiki Kaisha|Infrared detector having active regions and isolating regions formed of CdHgTe|
    US5952703A|1995-03-15|1999-09-14|Fujitsu Limited|Semiconductor devices and manufacturing method using II-VI compounds with wide area|
    WO2005101512A2|2004-04-05|2005-10-27|Commissariat A L'energie Atomique|Mesa structure photon detection circuit|
    US7279764B2|2004-06-01|2007-10-09|Micron Technology, Inc.|Silicon-based resonant cavity photodiode for image sensors|
    GB2434914A|2006-02-03|2007-08-08|Univ College Cork Nat Univ Ie|Vertical cavity surface emitting laser device|
    US8008683B2|2008-10-22|2011-08-30|Samsung Led Co., Ltd.|Semiconductor light emitting device|
    KR20150083888A|2012-11-05|2015-07-20|솔렉셀, 인크.|Systems and methods for monolithically isled solar photovoltaic cells and modules|
    US9634176B2|2013-05-29|2017-04-25|Kaneka Corporation|Method for manufacturing crystalline silicon-based solar cell and method for manufacturing crystalline silicon-based solar cell module|
    US9549442B1|2015-06-26|2017-01-17|Samsung Electronics Co., Ltd.|Light emitting device driving apparatus and lighting device including the same|
    US9748298B2|2015-06-30|2017-08-29|Semiconductor Components Industries, Llc|Image sensors with backside trench structures|FR3050572B1|2016-04-26|2018-04-13|Commissariat A L'energie Atomique Et Aux Energies Alternatives|SUR-DOPE INTERDODE DETECTION PHOTO-DETECTION DEVICE AND METHOD OF MANUFACTURING|
    WO2018212175A1|2017-05-15|2018-11-22|ソニーセミコンダクタソリューションズ株式会社|Photoelectric conversion element and imaging element|
    JP2019201171A|2018-05-18|2019-11-21|キヤノン株式会社|Imaging apparatus and method for manufacturing the same|
    FR3090198A1|2018-12-18|2020-06-19|Commissariat A L'energie Atomique Et Aux Energies Alternatives|INFRARED DETECTOR WITH PHOTON COLLECTION STRUCTURE AND MANUFACTURING METHOD THEREOF|
    法律状态:
    2016-11-30| PLFP| Fee payment|Year of fee payment: 2 |
    2017-06-02| PLSC| Search report ready|Effective date: 20170602 |
    2017-11-30| PLFP| Fee payment|Year of fee payment: 3 |
    2019-11-29| PLFP| Fee payment|Year of fee payment: 5 |
    2021-08-06| ST| Notification of lapse|Effective date: 20210705 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1561487A|FR3044468B1|2015-11-27|2015-11-27|COATED PHOTO DETECTION DEVICE COMPRISING LARGE BANDWIDTH COATED TRENCHES AND METHOD FOR MANUFACTURING THE SAME|
    FR1561487|2015-11-27|FR1561487A| FR3044468B1|2015-11-27|2015-11-27|COATED PHOTO DETECTION DEVICE COMPRISING LARGE BANDWIDTH COATED TRENCHES AND METHOD FOR MANUFACTURING THE SAME|
    US15/777,722| US10566366B2|2015-11-27|2016-11-25|Photodetection device having a coating comprising trenches with a wide bandgap coating and production method|
    EP16802028.7A| EP3381057B1|2015-11-27|2016-11-25|Photodetection device having a coating comprising trenches with a wide bandgap coating and production method|
    PCT/EP2016/078792| WO2017089527A1|2015-11-27|2016-11-25|Photodetection device having a coating comprising trenches with a wide bandgap coating and production method|
    IL259543A| IL259543A|2015-11-27|2018-05-23|Photodetection device having a coating comprising trenches with a wide bandgap coating and production method|
    [返回顶部]